The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors-Reference-Cited by-同舟云学术

The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors

Published:2006-04 Issue:4 Volume:40 Page:394-400
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Poklonski N. A.,Vyrko S. A.,Zabrodskiĭ A. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378260604004X.pdf

Reference44 articles.

1. E. M. Gershenzon, A. P. Mel’nikov, R. I. Rabinovich, and N. A. Serebryakova, Usp. Fiz. Nauk 132, 353 (1980) [Sov. Phys. Usp. 23, 684 (1980)].

2. H. Nishimura, Phys. Rev. [Sect. A] 138, A815 (1965).

3. L. P. Ginzburg, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 338 (1977) [Sov. Phys. Semicond. 11, 195 (1977)]; Fiz. Tekh. Poluprovodn. (Leningrad) 12, 564 (1978) [Sov. Phys. Semicond. 12, 326 (1978)]; Fiz. Tekh. Poluprovodn. (Leningrad) 23, 1629 (1989) [Sov. Phys. Semicond. 23, 1008 (1989)].

4. N. A. Poklonskiĭ, A. I. Syaglo, and G. Biskupski, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 415 (1999) [Semiconductors 33, 402 (1999)].

5. E. M. Gershenzon, F. M. Ismagilova, and L. B. Litvak-Gorskaya, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28, 671 (1994) [Semiconductors 28, 401 (1994)].

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