Variation in optical-absorption edge in SiN x layers with silicon clusters-Reference-Cited by-同舟云学术

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Variation in optical-absorption edge in SiN x layers with silicon clusters

Published:2008-02 Issue:2 Volume:42 Page:202-207
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Efremov M. D.,Volodin V. A.,Marin D. V.,Arzhannikova S. A.,Kamaev G. N.,Kochubeĭ S. A.,Popov A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608020152.pdf

Reference9 articles.

1. M. M. Gorshkov, Ellipsometry (Sovetskoe Radio, Moscow, 1974) [in Russian].

2. V. N. Novikov, A. P. Sokolov, O. A. Golikova, et al., Fiz. Tverd. Tela (Leningrad) 32, 1515 (1990) [Sov. Phys. Solid State 32, 884 (1990)].

3. J. Tauc, in Optical Properties of Solids, Ed. by F. Abeles (North-Holland, Amsterdam, 1972), p. 277.

4. D. E. Aspnes, Thin Solid Films 89, 249 (1982).

5. D. A. G. Bruggeman, Ann. Phys. (Leipzig) 24, 636 (1935).

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