Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons-Reference-Cited by-同舟云学术

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Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons

Published:2006-07 Issue:7 Volume:40 Page:803-807
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Poklonski N. A.,Shpakovski S. V.,Gorbachuk N. I.,Lastovskii S. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606070128.pdf

Reference31 articles.

1. J. D. Greenfield, Practical Transistors and Linear Integrated Circuits (Wiley, Rochester, 1988; Mir, Moscow, 1992).

2. K. Board, Rep. Prog. Phys. 48, 1595 (1985).

3. K. F. Ibrahim, Television Receivers (Longman Sci. Tech., Burnt Mill, 1992; Mir, Moscow, 2000).

4. L. N. Stepanova, Zarubezh. Radioélektron., No. 5, 79 (1991).

5. A. N. Ser’eznov, L. N. Stepanova, O. N. Negodenko, and V. P. Putilin, Semiconductor Analogues of Reactivities (Znanie, Moscow, 1990) [in Russian].

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