Author:
Dunaev A. V.,Pivovarenok S. A.,Efremov A. M.,Svettsov V. I.,Kapinos S. P.,Yudina A. V.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki (Materials for Electronic Engineering), St. Petersburg: Lan’, 2001.
2. Gillis, H.P., Choutov, D.A., Martin, K.P., and Song Li, Low energy electron-enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma, App. Phys. Lett., 1996, vol. 68, no. 16, pp. 2255–2257.
3. Sahafi, H.F. and Goldspink, G.F., Effect of flow rate on reactive ion etching of GaAs in CH4/H2 plasma, Vacuum, 1993, vol. 44, nos. 3–4, pp. 263–265.
4. Rawal, D.S., Sehgal, B.K., Muralidharan, R., and Malik, H.K., Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2/BCl3-based inductively coupled plasma, Plasma Sci. Technol. (Bristol, UK), 2011, vol. 13, no. 2, pp. 223–229.
5. Yoon, S.F., Ng, T.K., and Zheng, H.Q., Study of GaAs and GaInP etching in Cl2/Ar electron cyclotron resonance plasma, Thin Solid Films, 2001, vol. 394, nos. 1–2, pp. 249–254.
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