1. Wada, A., Zhang, R., Takagi, Sh. and Samukawa, S., Formation of thin germanium dioxide film with a highquality interface using a direct neutral beam oxidation process, Jpn. J. Appl. Phys., 2012, vol. 51, p. 125603.
2. Nakayama, D., Wada, A., Kubota, T., Bruce, R., Martin, R.M., Haass, M., Fuller, N., and Samukawa, S., Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam, J. Phys. D: Appl. Phys., 2013, vol. 46, p. 205203.
3. Miwa, K., Nishimori, Yu., Ueki, Sh., Sugiyama, M., Kubota, T., and Samukawa, S., Low-damage silicon etching using a neutral beam, J. Vac. Sci. Technol. B 2013, vol. 31, no. 5, p. 051207.
4. Maishev, Yu.P., Shevchuk, S.L., Terent’ev, Yu.P., and Kudrya, V.P., The source of fast neutral particles, RF Patent, no. 2468465 C2, 2010.
5. Maishev, Yu.P., Terent’ev, Yu.P., and Shevchuk, S.L., Ion sources and ion-beam technologies for deposition and etching of film structures for microand nanoelectronics, Integral, 2009, no. 5(49), pp. 10–12.