Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Schwierz, F., Wong, H., and Liou, J.J., Nanometer CMOS, Singapore: Pan Stanford, 2010.
2. Ferain, I., Colinge, C.A., and Colinge, J., Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors, Nature (London, U.K.), 2011, vol. 479, pp. 310–316.
3. Nanoelectronics: Devices, Circuits and Systems, Kaushik, B.K., Ed., Amsterdam: Elsevier, 2018.
4. Moon, D., Choi, S., Duarte, J., and Chio, Y., Investigation of silicon nanowire gate—all-around junction less transistors built on a bulk substrate, IEEE Trans. Electron Dev., 2013, vol. 60, pp. 1355–1360.
5. Avilla-Herrerea, F., Paz, B., Cerdeira, A., Estrada, M., and Pavanello, M., Charge-based compact analytical model for junction less triple-gate nanowire transistors, Solid-State Electron., 2016, vol. 121, pp. 23–27.
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