A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist-Reference-Cited by-同舟云学术

A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist

Published:2013-09 Issue:5 Volume:42 Page:261-269
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Bruk M. A.,Zhikharev E. N.,Kal’nov V. A.,Spirin A. V.,Strel’tsov D. R.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106373971305003X.pdf

Reference12 articles.

1. Ueno, N., Konishi, S., Tanimoto, K., and Sugita, K., Direct etching of resists by UV light, Jpn. J. Appl. Phys., 1981, vol. 20, pp. L709–L712.

2. Lanagan, M., Lindsey, S., and Viswanathan, N.S., Deep UV ablation of PMMA resists, Jpn. J. Appl. Phys., 1983, vol. 22, pp. L67–L69.

3. Amerik, Yu.B., Valiev, K.A., et al., Photoetching of polymers in conditions of the chain depolymerization of macromolecules, Dokl. Akad. Nauk SSSR, 1985, vol. 280, no. 5, p. 1106.

4. Matsu, S., Electron beam lithography using surface reactions with ClF3, Appl. Phys. Lett., 1989, vol. 55, no. 2, pp. 134–136.

5. Bruk, M.A., Kondrat’eva, M.V., Baranov, A.A., et al., Radiation depolymerization of poly(methyl methacrylate) adsorbed on silochrome, Vysokomol. Soedin., 1999, vol. 41A, no. 2, pp. 256–262.

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