Formation of Defects Forming Deep Levels in SiON/AlGaN/GaN Structures
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Published:2023-12
Issue:8
Volume:52
Page:817-826
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Enisherlova K. L., Mikhaylov I. A., Seidman L. A., Kirilenko E. P.ORCID, Kolkovsky Yu. V.
Publisher
Pleiades Publishing Ltd
Reference18 articles.
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