Author:
Tereshchenko A. N.,Steinman E. A.,Mazilkin A. A.,Khorosheva M. A.,Kononchuk O.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Kveder, V., Badylevich, M., Steinman, E., Izotov, A., Seibt, M., and Schröter, W., Silicon light emitting diodes based on dislocation luminescence, Appl. Phys. Lett., 2004, vol. 84, no. 12, pp. 2106–2108.
2. Vdovin, V., Vyvenko, O., Ubyivovk, E., and Kononchuk, O., Mechanisms of dislocation network formation in Si(001) hydrophilic bonded wafers, Solid State Phenom., 2011, vols. 178–179, pp. 253–258.
3. Wilhelm, T., Mchedlidze, T., Yu, X., Arguirov, T., Kittler, M., and Reiche, M., Regular dislocation networks in silicon. Part I: Structure, Solid State Phenom., 2008, vols. 131–133, pp. 571–578. doi:10.4028/www.scientific. net/SSP.131-133.571
4. Rouviere, J.L., Rousseau, K., Fournel, F., and Moriceau, H., Huge differences between lowand highangle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers, Appl. Phys. Lett., 2000, vol. 77, no. 8, pp. 1135–1137. doi:10.1063/1.1289656
5. Reiche, M., Dislocation networks formed by silicon wafer direct bonding, Mater. Sci. Forum, 2008, vol. 590, pp. 57–78. doi:10.4028/www.scientific.net/MSF.590.57