Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers-Reference-Cited by-同舟云学术

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

Published:2011-08 Issue: Volume:178-179 Page:253-258
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Vdovin Vladimir¹,Vyvenko Oleg¹,Ubyivovk Evgenii¹,Kononchuk Oleg²

Affiliation:

1. St. Petersburg State University

2. SOITEC

Abstract

Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.178-179.253.pdf

Reference12 articles.

1. M. Reiche, M. Kittler, R. Scholz, A. Hähnel, T. Arguirov, Structure and properties of dislocations in interfaces of bonded silicon wafers, J. Phys.: Conf. Ser. 281 (2011) 012017-012026.

2. M. Reiche, Dislocation networks formed by silicon wafer direct bonding, Matatials Science Forum 590 (2008) 57-78.

3. H. Föll and D. Ast, TEM observation on grain boundaries in sintered silicon, Phil. Mag. A, 40 (1979) 589-610.

4. M. Benamara, A. Rocher, A. Laporte, G. Sarrabayrouse, L. Lescouzѐres, A. PeyerLavigne, M. Fnaiech and A. Claverie, Atomic structure of the interface between silicon directly bonded wafers, Mat. Res. Soc. Symp. Proc. 378 (1995) 863-868.

5. T. Akatsu, R. Scholz, U. Gösele, Dislocation structure in low-angle interface between bonded Si(001) wafers, J. Mat. Sci. 39 (2004) 3031-3039.

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