Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low Temperature Plasma for Etching and Purification of Materials), Moscow: Energoatomizdat, 1987.
2. Shul, R.J., Willison, C.G., Bridges, M.M., Han, J., Lee, J.W., Pearton, S.J., and Lester, L.F., Selective inductively coupled plasma etching of group-III nitrides in Cl2-and BCl3-based plasmas, J. Vacuum Sci. Technol. A, 1998, vol. 16, no. 3, pp. 1621–1626.
3. Kim, G.H., Kim, C.I., and Efremov, A.M., Effect of gas mixing ratio on MgO etch behaviour in inductively coupled BCl3/Ar plasma, Vacuum, 2005, vol. 79, no. 3, pp. 231–240.
4. Yang, X., Woo, J.C., Um, D.S., and Kim, C.I., Dry etching of Al2O3 thin films in O2/BCl3/Ar inductively coupled plasma, Trans. Electr. Electron. Mater., 2010, vol. 11, no. 5, pp. 202–205.
5. Rokhlin, G.N., Razryadnye istochniki sveta (Gas-Discharge Light Sources), 2nd ed., Moscow: Energatomizdat, 1991.
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