1. Kallfass, I., Pahl, P., Massler, H., Leuther, A., Tessmann, A., Koch, S., and Zwick, T., A 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology, IEEE Microwave Wireless Comp. Lett., 2009, vol. 19, no. 6, pp. 410–412.
2. Pala, N., Hu, X., Deng, J., Yang, J., Gask, R., Yang, Z., Koudymov, A., Shur, M.S., and Simin, G., Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs, Solid-State Electron., 2008, no. 52, pp. 1217–1220.
3. Konoplev, B.G. and Ryndin, E.A., RF Patent, no. 2287896, 2006.
4. Konoplev, B.G. and Ryndin, E.A., Integral logic components based on tunnel-coupled nanostructures, Izv. Vyssh. Uchebn. Zaved., Elektronika, 2006, no. 3, pp. 18–26.
5. Ryndin, E.A., Ultrahigh-speed electron switches based on the controlled relocation of the maximum of the carrier wave function, Vestn. Yuzhn. Nauch. Tsentra Ross. Akad. Nauk, 2006, vol. 2, no. 2, pp. 8–16.