A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology-Reference-Cited by-同舟云学术

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A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

Published:2009-06 Issue:6 Volume:19 Page:410-412
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Kallfass I.¹,Pahl P.¹,Massler H.¹,Leuther A.¹,Tessmann A.¹,Koch S.,Zwick T.

Affiliation:

1. Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/5068488/04967843.pdf?arnumber=4967843

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Design of220GHz power amplifier based on90nm InP HEMT process br;J INFRARED MILLIM W;2022

3. Development of Packaged G-Band Power Amplifier Based on INP HEMT Technology Utilizing Novel De-Embedding Techniques;2020 IEEE International Conference on Plasma Science (ICOPS);2020-12-06

4. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2020-07

5. Nanoplasma-enabled picosecond switches for ultrafast electronics;Nature;2020-03-25

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