Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma
-
Published:2018-11
Issue:6
Volume:47
Page:415-426
-
ISSN:1063-7397
-
Container-title:Russian Microelectronics
-
language:en
-
Short-container-title:Russ Microelectron
Author:
Rezvanov A. A.,Matyushkin I. V.,Gushchin O. P.,Gornev E. S.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Volksen, W., Miller, R.D., and Dubois, G., Low dielectric constant materials, Chem. Rev., 2010, vol. 110, no. 1, p. 56. 2. Valeev, A.S., Krasnikov, G.Ya., Gvozdev, V.A., and Kuznetsov, P.I., The method of manufacturing multilevel copper metallization with an ultra-low value of the dielectric constant of intra-level insulation, RF Patent No. 2548523, 2013. 3. Atkins, P. and de Paula, J., Atkins Physical Chemistry, Oxford: Oxford Univ. Press, 2010, pp. 622–629. 4. Maex, K., Baklanov, M.R., Shamiryan, D., Iacopi, F., Brongersma, S.H., and Yanovitskaya, Z.S., Low dielectric constant materials for microelectronics, J. Appl. Phys., 2003, vol. 93, no. 11, p. 8793. 5. Braginsky, O.V., Kovalev, A.S., Lopaev, D.V., Malykhin, E.M., Mankelevich, Yu.A., Rakhimova, T.V., Rakhimov, A.T., Vasilieva, A.N., Zyryanov, S.M., and Baklanov, M.R., J. Appl. Phys., 2010, vol. 108, p. 073303.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|