Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer
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Published:2018-03
Issue:2
Volume:47
Page:137-141
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Aleshin A. N.,Zenchenko N. V.,Ponomarev D. S.,Ruban O. A.
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Fedorov, Yu.V., Wide-range heterostructures (Al,Ga,In)N and millimeter wave devices on their base, Elektron. Nauka, Tekhnol., Biznes, 2011, vol. 2, p. 00108. 2. Tang, Y., Shinohara, K., Regan, D., Corrion, A., Brown, D., Wong, J., Schmitz, A., Fung, H., Kim, S., and Micovic, M., Member, IEEE Electron Dev. Lett., 2015, vol. 36, pp. 549–551. 3. Glinskii, I.A. and Zenchenko, N.V., Computer simulation of the heat distribution element for high-power microwave transistors, Russ. Microelectron., 2015, vol. 44, no. 4, pp. 236–240. 4. Mikhailovich, S.V., Galiev, R.R., Zuev, A.V., Pavlov, A.Yu., Ponomarev, D.S., and Khabibullin, R.A., Tech. Phys. Lett., 2017, vol. 43, no. 8, pp. 733–735. 5. Man-Young, J., A technique for extracting small-signal equivalent-circuit elements of HEMTs, IEICE Trans. Electron., 1999, vol. E82-C, p. 1968.
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