Oscillating transient currents in PbSnTe:In in a backgroundless mode-Reference-Cited by-同舟云学术

Oscillating transient currents in PbSnTe:In in a backgroundless mode

Published:2011-03 Issue:2 Volume:40 Page:73-77
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Akimov A. N.,Klimov A. E.,Neizvestnyi I. G.,Pashchin N. S.,Sherstyakova V. N.,Shumskii V. N.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739711020028.pdf

Reference7 articles.

1. Akimov, B.A., Ryabova, L.I., Shumskiy, V.N., and Petikov, N.I., An Operating Regime Based on Switching Effects for Photodetectors of Pb1 − x SnxTe(In) MBE Films, Infrared Phys., 1993, vol. 34, no. 4, pp. 375–378.

2. Suris, R.A. and Fuks, B.I., Impedance of the Sample Made From the Compensated Material under the Excitation of the Wave of Spatial Recharge, Fiz. Tekh. Poluprovodn. (St.-Peterburg), 1975, vol. 9, no. 9, pp. 1717–1728.

3. Bonch-Bruevich, V.L. and Kalashnikov, G., Possibility of Recombination Instability in Semiconductors, Fiz. Tverd. Tela, 1965, vol. 7, no. 3, pp. 750–758.

4. Akimov, A.N., Erkov, V.G., Klimov, A.E., Molodtsova, E.L., Suprun, S.P., and Shumskii, V.N., Injection Currents in a Narrow-Gap Pb1 − x SnxTe〈In〉 Dielectric, Fiz. Tekh. Poluprovodn. (St.-Peterburg), 2005, vol. 39, no. 5, pp. 563–568 [Semiconductors (Engl. Transl.), vol. 39, no. 5, pp. 533–538].

5. Klimov, A.E. and Shumsky, V.N., Shallow Traps and the Space-Charged-Induced Limitation of the Injection Current in PbSnTe:In Narrow-Gap Ferroelectric, Physica B, vol. 404, pp. 5028–5031.