Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Switching effects in the dielectric phase of the Pb1−xSnxTe (In) compounds
2. Mixed-valence impurities in lead telluride-based solid solutions
3. Injection currents in narrow-gap (Pb1−x SnxTe):In insulators
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