The influence of kinetic processes at a negative muon track endpoint in doped nondegenerate silicon on the behavior of muon spin polarization-Reference-Cited by-同舟云学术

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The influence of kinetic processes at a negative muon track endpoint in doped nondegenerate silicon on the behavior of muon spin polarization

Published:2004-08 Issue:2 Volume:99 Page:352-362
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Baturin A. S.,Gorelkin V. N.,Solov’ev V. R.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/1.1800192.pdf

Reference29 articles.

1. V. N. Gorelkin, T. N. Mamedov, and D. V. Rubtsov, Hyperfine Interact. C 1, 191 (1996).

2. V. N. Gorelkin, V. G. Grebennik, K. I. Gritsai, et al., Yad. Fiz. 56(10), 29 (1993) [Phys. At. Nucl. 56, 1316 (1993)].

3. T. N. Mamedov, V. N. Duginov, V. G. Grebennik, et al., Hyperfine Interact. 86, 717 (1994).

4. T. N. Mamedov, V. N. Gorelkin, V. G. Grebennik, et al., Pis’ma Zh. Éksp. Teor. Fiz. 63, 539 (1996) [JETP Lett. 63, 566 (1996)].

5. T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, et al., Hyperfine Interact. 105, 345 (1997).

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1. Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon;Journal of Experimental and Theoretical Physics;2012-11

2. Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments;Physica B: Condensed Matter;2006-03

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