Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments-Reference-Cited by-同舟云学术

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Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments

Published:2006-03 Issue: Volume:374-375 Page:340-346
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Baturin A.S.,Gorelkin V.N.,Rastunkov V.S.,Soloviev V.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. The nature of the acceptor centre in semiconducting diamond

3. T.N. Mamedov, A.G. Dutov, D. Herlah, et al., JINR preprint, P14-2004-104, Dubna, 2004.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On Mobility of Definite Energy Charge Carriers;Semiconductors;2018-01

2. Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure;Crystals;2017-06-14

3. Formation of chemically bound positively charged radiation defect induced by negative muon in diamond crystals;Diamond and Related Materials;2015-09

4. Muonic atom as an acceptor centre in diamond;Journal of Physics: Conference Series;2014-12-16

5. Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond;Semiconductors;2013-12

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