Transition of the near-surface δ layer in an Al/δ(Si)-GaAs tunnel structure to the insulating state under pressure-Reference-Cited by-同舟云学术

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Transition of the near-surface δ layer in an Al/δ(Si)-GaAs tunnel structure to the insulating state under pressure

Published:2004-09 Issue:6 Volume:80 Page:433-435
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Dizhur E. M.,Voronovsky A. N.,Fedorov A. V.,Kotel’nikov I. N.,Dizhur S. E.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1830663.pdf

Reference9 articles.

1. .E. M. Dizhur, A. N. Voronovsky, I. N. Kotelnikov, et al., Phys. Status Solidi B 235, 531 (2003).

2. E. M. Dizhur and A. V. Fedorov, cond-mat/0408206.

3. I. N. Kotel’nikov, V. A. Kokin, Yu. V. Fedorov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 71, 564 (2000) [JETP Lett. 71, 387 (2000)].

4. A. N. Voronovskii, E. M. Dizhur, and E. S. Itskevich, Zh. Éksp. Teor. Fiz. 77, 1119 (1979) [Sov. Phys. JETP 50, 564 (1979)].

5. D. K. Maude, J. C. Portal, L. Dmowski, et al., Solid State Phenom. 10, 121 (1989).

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