Evidence for attainability of negative differential conductance in tunnel Schottky structures with two-dimensional channels
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2773935
Reference18 articles.
1. Terahertz frequency response of an In0.53Ga0.47As/AlAs resonant‐tunneling diode
2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
3. Resonant tunneling in semiconductor double barriers
4. New Phenomenon in Narrow Germaniump−nJunctions
5. Negative differential conductance in the tunnel Schottky contact with two-dimensional channel
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1. Cylindrical Cavity Optimization for Resonant-Tunneling Diode Oscillators;IEEE Transactions on Microwave Theory and Techniques;2022-05
2. Frequency Limitations of Resonant-Tunnelling Diodes in Sub-THz and THz Oscillators and Detectors;Journal of Infrared, Millimeter, and Terahertz Waves;2019-03-13
3. Principles of THz Generation;Semiconductor Terahertz Technology;2015-07-23
4. Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy;Nanoscale Research Letters;2011-01-26
5. Strong inhomogeneity of the tunnel Schottky structures withδ-doped two-dimensional channels at large bias;Physical Review B;2010-08-17
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