Nature of a temperature hysteresis of effective shear modulus in single-crystal silicon

Author:

Oleinich-Lysyuk A. V.,Gutsulyak B. I.,Fodchuk I. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. A. V. Oleinich-Lysyuk, N. P. Beshlei, and I. M. Fodchuk, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1337 (2003) [Semiconductors 37, 1299 (2003)].

2. O. G. Vlokh, A. V. Kityk, O. M. Mokryi, and V. G. Gribik, Fiz. Tverd. Tela (Leningrad) 33, 312 (1991) [Sov. Phys. Solid State 33, 181 (1991)].

3. B. F. Borisov, T. Kraevskii, A. K. Radzhabov, and E. V. Charnaya, Fiz. Tverd. Tela (St. Petersburg) 35, 241 (1993) [Phys. Solid State 35, 127 (1993)].

4. V. G. Eremenko and V. I. Nikitenko, Phys. Status Solidi A 14, 317 (1972).

5. P. Pirouz, R. Chaim, and J. Samuels, Izv. Akad. Nauk SSSR, Ser. Fiz. 51, 753 (1987).

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1. Low-temperature hysteresis of dynamic shear modulus Geff in silicon;Semiconductor physics, quantum electronics and optoelectronics;2005-10-31

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