X-ray spectral analysis of the interface of a thin Al2O3 film prepared on silicon by atomic layer deposition-Reference-Cited by-同舟云学术

X-ray spectral analysis of the interface of a thin Al2O3 film prepared on silicon by atomic layer deposition

Published:2004-06 Issue:6 Volume:46 Page:1145-1148
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Shulakov A. S.,Braiko A. P.,Bukin S. V.,Drozd V. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1767259.pdf

Reference13 articles.

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3. W. S. Yang, U. K. Kim, S.-Y. Yang, J. H. Choi, H. B. Park, S. I. Lee, and J.-B. Yoo, Surf. Coat. Technol. 131, 79 (2000).

4. J. Kim, D. Kwong, K. Chakrabarti, C. Lee, K. Oh, and J. Lee, J. Appl. Phys. 92(11), 6739 (2002).

5. V. Consier, H. Bender, M. Caumax, J. Chen, T. Conard, H. Nohira, O. Richard, W. Tsai, W. Vandervorst, E. Young, C. Zhao, S. D. Gendt, M. Heyns, J. W. H. Maes, M. Tuominen, C. Rochart, M. Oliver, and A. Chabli, in Proceedings of the International Workshop on Gate Insulator (IWGI) (Japan, 2001).

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