Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs-Reference-Cited by-同舟云学术

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Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs

Published:2007-01 Issue:1 Volume:49 Page:171-177
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Aronzon B. A.,Granovsky A. B.,Davydov A. B.,Danilov Yu. A.,Zvonkov B. N.,Ryl’kov V. V.,Uskova E. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783407010271.pdf

Reference25 articles.

1. B. Lee, T. Jungwirth, and A. H. MacDonald, Semicond. Sci. Technol. 17, 393 (2002).

2. F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, and H. Ohno, Physica E (Amsterdam) 16, 104 (2003).

3. C. Timm, J. Phys.: Condens. Matter 15, R1865 (2003).

4. F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, and H. Ohno, Physica E (Amsterdam) 12, 351 (2002).

5. H. Ohno and F. Matsukura, Solid State Commun. 117, 179 (2001).

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1. Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films;Physics-Uspekhi;2021-11

2. Photoelectron characteristics of diode structures based on quantum-well GaAs/InGaAs heteronanostructures with a Mn δ-doped layer;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-01

3. Influence of defect formation as a result of incorporation of a Mn δ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells;Semiconductors;2012-02

4. The effect of the Mn delta layer on the photosensitivity spectra of structures with In x Ga1 − x As/GaAs quantum wells;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2011-06

5. Electron spin resonance in InGaAs/GaAs heterostructures with a manganese δ layer;Journal of Experimental and Theoretical Physics;2011-02

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