The effect of the Mn delta layer on the photosensitivity spectra of structures with In x Ga1 − x As/GaAs quantum wells-Reference-Cited by-同舟云学术

The effect of the Mn delta layer on the photosensitivity spectra of structures with In x Ga1 − x As/GaAs quantum wells

Published:2011-06 Issue:3 Volume:5 Page:563-565
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Gorshkov A. P.,Karpovich I. A.,Filatov D. O.,Pavlova E. D.,Dorokhin M. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

Reference8 articles.

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3. Yu. V. Vasil’eva, Yu. A. Danilov, Ant. A. Ershov, et al., Fiz. Tekh. Poluprovodn. 39, 87 (2005) [Semiconductors 39, 77 (2005)].

5. B. A. Aronzon, A. B. Granovskii, A. B. Davydov, et al., Fiz. Tverd. Tela 49, 165 (2007) [Phys. Solid State 49, 171 (2007)].

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3. Manganese diffusion in ingaas/gaas quantum well structures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-05