Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals-Reference-Cited by-同舟云学术

Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

Published:2010-09 Issue:9 Volume:52 Page:1880-1886
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Talanin V. I.,Talanin I. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783410090155.pdf

Reference22 articles.

1. V. I. Talanin, Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals and Their Properties (ZIGMU, Zaporozh’e, Ukraine, 2007) [in Russian].

2. V. I. Talanin and I. E. Talanin, in New Research on Semiconductors, Ed. by T. B. Elliot (Nova Sci., New York, 2006), p. 31.

3. V. V. Voronkov, J. Cryst. Growth 59, 625 (1982).

4. M. S. Kulkarni, J. Cryst. Growth 303, 438 (2007).

5. T. Sinno and R. A. Brown, J. Electrochem. Soc. 146, 2300 (1999).

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