The Qualitative Difference between Mechanisms of Electroforming in Si–SiO[sub 2]–W Structures Based on n-Si and p-Si-Reference-Cited by-同舟云学术

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The Qualitative Difference between Mechanisms of Electroforming in Si–SiO[sub 2]–W Structures Based on n-Si and p-Si

Published:2005 Issue:2 Volume:39 Page:206
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mordvintsev V. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1864200.pdf

Reference17 articles.

1. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Usp. Fiz. Nauk 112, 8 (1974).

2. H. Pagnia and N. Sotnik, Phys. Status Solidi A 108(11), 11 (1988).

3. V. M. Mordvintsev and V. L. Levin, Phys. Low-Dimens. Semicond. Struct. 12, 243 (1995).

4. K. A. Valiev, V. L. Levin, and V. M. Mordvintsev, Zh. Tekh. Fiz. 67(11), 39 (1997) [Tech. Phys. 42, 1275 (1997)].

5. V. M. Mordvintsev and S. E. Kudryavtsev, Mikroélektronika 30, 353 (2001) [Russ. Microelectronics 30, 303 (2001)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures;Nanotechnologies in Russia;2009-02

2. Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures;SPIE Proceedings;2006-05-24

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