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2. V. M. Mordvintsev, and S. E. Kudryavtsev, “Electroforming of Si-SiO2-W Structures with an Exposed Nanometer-Thick SiO2 Layer,” Mikroelektronika 30(5), 353–363 (2001) [Russ. Microelectron. 30 (5), 303–311 (2001)].
3. V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin, “Memory Matrix Cell,” RF Patent No. 2 263 373 (2005).
4. V. M. Mordvintsev and S. E. Kudryavtsev, “Energy-Independent Memory Matrix Cell,” RF Patent No. 2 302 058 (2007).
5. V. M. Mordvintsev and S. E. Kudryavtsev, “Highly Doped Si-SiO2-W Sandwich Structures with an Exposed Insulator Edge: Electrical Transport and Electroforming,” Mikroelektronika 36(6), 1–14 (2007) [Russ. Microelectron. 36 (6), 371–383 (2007)].