Production and properties of In/HgGa2S4 Schottky barriers-Reference-Cited by-同舟云学术

Production and properties of In/HgGa2S4 Schottky barriers

Published:1999-10 Issue:10 Volume:33 Page:1108-1110
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Rud’ V. Yu.,Rud’ Yu. V.,Ohmer M. C.,Schunemann P. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187875.pdf

Reference14 articles.

1. N. A. Goryunova, Crystal and Chemistry of Diamond-Like Semiconductors (Chapman and Hall, London, 1965).

2. V. D. Prochukhan and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 12, 209 (1978) [Sov. Phys. Semicond. 12, 121 (1978)].

3. N. A. Goryunova, A. A. Grinberg, S. M. Ryvkin, I. M. Fishman, G. P. Spen’kov, and I. D. Yaroshetskii, Fiz. Tekh. Poluprovodn. 2, 1525 (1968) [Sov. Phys. Semicond. 2, 1272 (1968)].

4. G. C. Bhar, Jpn. J. Appl. Phys. 32, 653 (1993).

5. M. C. Ohmer and R. Pandey, MRS Bulletin 23, 16 (1998).

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