Photosensitive structures based on HgGa2S4 single crystals: Preparation and properties-Reference-Cited by-同舟云学术

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Photosensitive structures based on HgGa2S4 single crystals: Preparation and properties

Published:2004-11 Issue:11 Volume:38 Page:1291-1297
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Rud’ V. Yu.,Rud’ Yu. V.,Bairamov B. Kh.,Il’chuk G. A.,Ukrainets V. O.,Fernelius N.,Shunemann P. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1823061.pdf

Reference16 articles.

1. A. N. Georgobiani, S. I. Radautsan, and N. M. Tiginyanu, Fiz. Tekh. Poluprovodn. (Leningrad) 19, 193 (1985) [Sov. Phys. Semicond. 19, 121 (1985)].

2. V. Yu. Rud’, Yu. V. Rud’, M. C. Ohmer, and P. G. Schunemann, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1217 (1999) [Semiconductors 33, 1108 (1999)].

3. P. C. Ricci, A. Aneda, R. Corping, et al., in Abstracts of 13th International Conference on Ternary and Multinary Compounds (Paris, 2002), p. 189.

4. M. C. Ohmer and R. Pandey, MRS Bull. 23, 16 (1998).

5. P. G. Schunemann and T. M. Pollak, MRS Bull. 23, 23 (1998).

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1. Electronic structure of HgGa2S4;Solid State Communications;2006-05

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