Photoelectric properties of GaAs/InAs heterostructures with quantum dots-Reference-Cited by-同舟云学术

Photoelectric properties of GaAs/InAs heterostructures with quantum dots

Published:1997-09 Issue:9 Volume:31 Page:941-946
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zvonkov B. N.,Malkina I. G.,Lin’kova E. R.,Aleshkin V. Ya.,Karpovich I. A.,Filatov D. O.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187139.pdf

Reference17 articles.

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3. D. Bimberg, N. N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Bohrer, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, Zh. I. Alferov, S. S. Ruvimov, P. Werner, U. Gosele, and J. Heydenreich, Abstracts, Int. Symp. Nanostructures: Physics and Technology (St. Petersburg, Russia, 1995) p. 167.

4. G. E. Cirlin, G. M. Guryanov, A. O. Golubok, S. Ya. Tipissev, N. N. Ledentsov, P. S. Kop’ev, M. Grundmann, and D. Bimberg, Appl. Phys. Lett. 67, 97 (1995).

5. I. N. Stranski and L. von Krastanov, Sitzungsber. Akad. Wiss. Wien IIb 146, 797 (1938).

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