Photoelectric properties of the GeSi/Si heterostructures with self-assembled nanoclusters grown by sublimation molecular beam epitaxy in a GeH4 medium-Reference-Cited by-同舟云学术

Photoelectric properties of the GeSi/Si heterostructures with self-assembled nanoclusters grown by sublimation molecular beam epitaxy in a GeH4 medium

Published:2009-10 Issue:5 Volume:3 Page:709-717
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Filatov D. O.,Kruglova M. V.,Isakov M. A.,Gorshkov A. P.,Shengurov V. G.,Chalkov V. Yu.,Denisov S. A.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451009050085.pdf

Reference23 articles.

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4. A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, et al., Fiz. Tekh. Poluprovodn. 38, 1265 (2004) [Semiconductors 38, 1225 (2004)].

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