Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films-Reference-Cited by-同舟云学术

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Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

Published:2019-12 Issue:12 Volume:61 Page:2386-2391
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Sergeeva O. N.,Solnyshkin A. V.,Kiselev D. A.,Il’ina T. S.,Kukushkin S. A.,Sharofidinov Sh. Sh.,Kaptelov E. Yu.,Pronin I. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783419120485.pdf

Reference24 articles.

1. S. A. Kukushkin and A. V. Osipov, Phys. Solid State 50, 1238 (2008).

2. S. A. Kukushkin and A. V. Osipov, J. Phys. D 47, 313001 (2014).

3. V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, Tech. Phys. Lett. 36, 496 (2010).

4. V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, J. Opt. Technol. 78, 435 (2011).

5. Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Red’kov, A. S. Grashchenko, and A. V. Osipov, Tech. Phys. Lett. 45, 711 (2019).

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