Estimates of the spontaneous polarization and permittivities of AlN, GaN, InN, and SiC crystals-Reference-Cited by-同舟云学术

Estimates of the spontaneous polarization and permittivities of AlN, GaN, InN, and SiC crystals

Published:2009-06 Issue:6 Volume:51 Page:1231-1235
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Davydov S. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783409060249.pdf

Reference28 articles.

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2. Technical Digest of the International Conference on Silicon Carbide and Related Materials (ICSCRM), Otsu, Japan, 2007 (Otsu, 2007).

3. S. Yu. Davydov and A. V. Troshin, Fiz. Tverd. Tela (St. Petersburg) 49(4), 723 (2007) [Phys. Solid State 49 (4), 759 (2007)].

4. S. Yu. Davydov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36(1), 45 (2002) [Semiconductors 36 (1), 41 (2002)].

5. S. Yu. Davydov, Fiz. Tverd. Tela (St. Petersburg) 48(10), 1748 (2006) [Phys. Solid State 48 (10), 1853 (2006)].

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