Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon-Reference-Cited by-同舟云学术

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Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Published:2008-09-29 Issue:10 Volume:18 Page:1148-1152
ISSN:1054-660X
Container-title:Laser Physics
language:en
Short-container-title:Laser Phys.

Author:

Liu Y.,Liu S.,Wang Y.,Feng G.,Zhu J.,Zhao L.

Publisher

Pleiades Publishing Ltd

Subject

Industrial and Manufacturing Engineering,Condensed Matter Physics,Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1134/S1054660X08100071.pdf

Reference12 articles.

1. J. D. Fowlkes and A. J. Pedraza, “Microstructural Evolution of Laser-Exposed Silicon Targets in SF6 Atmospheres,” Appl. Phys. Lett. 77, 1629–1631 (2000).

2. T. H. Her, R. J. Finlay, C. Wu, et al., “Microstructuring of Silicon with Femtosecond Laser Pulses,” Appl. Phys. Lett. 73, 1673–1675 (1998).

3. M. Zhao, G. Yin, J. T. Zhu, and L. Zhao, “Picosecond Pulse Laser Microstructuring of Silicon,” Chin. Phys. Lett. 20, 1789–1791 (2003).

4. C. Wu, C. H. Crouch, L. Zhao, et al., “Near-Unity Below-Band-Gap Absorption by Microstructured Silicon,” Appl. Phys. Lett. 78, 1850–1852 (2001).

5. R. Younkin, J. E. Carey, E. Mazur, et al., “Infrared Absorption by Conical Silicon Microstructures Made in a Variety of Background Gases Using Femtosecond-Laser Pulses,” J. Appl. Phys. 93, 2626–2629 (2003).

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