1. J. Mandelkorn, L. Schwartz, J. Broder, and H. Kautz, J. Appl. Phys. 35, 2258 (1964).
2. N. T. Bagraev, E. P. Bochkarev, L. S. Vlasenko, et al., Izv. Akad. Nauk SSSR, Neorg. Mater. 14, 614 (1978).
3. G. V. Lashkarev, A. I. Dmitriev, G. A. Sukach, and V. A. Shershel’, Fiz. Tekh. Poluprovodn. (Leningrad) 5, 2075 (1971) [Sov. Phys. Semicond. 5, 1808 (1971)].
4. S. I. Pyshkin, S. I. Radutsan, and S. V. Slobodchikov, Fiz. Tekh. Poluprovodn. (Leningrad) 1, 1013 (1967) [Sov. Phys. Semicond. 1, 847 (1967)].
5. L. F. Zakharenkov, V. V. Kozlovskii, A. T. Gorelenok, and N. M. Shmidt, in Semiconductor Technology. Processing and Novel Fabrication Techniques (Wiley, New York, 1997), p. 91.