Influence of ytterbium impurity on luminescent properties of ZnSe<Al> crystals-Reference-Cited by-同舟云学术

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Influence of ytterbium impurity on luminescent properties of ZnSe crystals

Published:2016-12-05 Issue:4 Volume:19 Page:391-394
ISSN:1560-8034
Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Makhniy V.P.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. 1. N.K. Morozova, V.A. Kyznetsov, V.B. Rujukov, Zinc Selenide: Preparation and Optical Properties. Nauka, Moscow, 1992 (in Russian).

2. Problems of creation injection light diodes on basis of AIIBVI widegap semiconductor compounds . Izv. AN USSR.;Georgobiani;Ser Fizicheskaya,1985

3. Modern optoelectronic devices based on zinc selenide .;Kulchitskiy;Nanoinzheneriya,2014

4. Influence of Li, Cd, In and As impurities on optoelectronic properties of ZnSe .;Berezovskiy;Неорган матер,1997

5. The origin of edge luminescence in diffusion ZnSe:Sn layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence of crystals ZnSe :Gd;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

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