Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane-Reference-Cited by-同舟云学术

Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane

Published:2000-09 Issue:9 Volume:34 Page:1100-1102
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Astakhova A. P.,Danilova T. N.,Imenkov A. N.,Kolchanova N. M.,Sherstnev V. V.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1309431.pdf

Reference6 articles.

1. Yu. P. Yakovlev, A. N. Baranov, A. N. Imenkov, et al., Kvantovaya Élektron. (Moscow) 20, 839 (1993).

2. A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1469 (1999) [Semiconductors 33, 1322 (1999)].

3. A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 115 (2000) [Semiconductors 34, 237 (2000)].

4. T. N. Danilova, A. P. Danilova, O. G. Ershov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 373 (1998) [Semiconductors 32, 339 (1998)].

5. A. P. Danilova, T. N. Danilova, A. N. Imenkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1014 (1999) [Semiconductors 33, 924 (1999)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAsSb/InAsSbP current-tunable laser with narrow spectral line width;Applied Physics B;2003-06

2. Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous flux;Semiconductors;2002-11

3. Spectral line width of the current-tunable lasers on the base of InAsSb/InAsSbP at low temperature;Semiconductors;2002-05

4. InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range;Semiconductors;2001-12