Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films-Reference-Cited by-同舟云学术

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Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films

Published:2002-03 Issue:3 Volume:36 Page:265-269
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Georgobiani A. N.,Gruzintsev A. N.,Volkov V. T.,Vorob’ev M. O.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1461400.pdf

Reference11 articles.

1. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999).

2. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 38, L1205 (1999).

3. K. Minegishi, Y. Kowai, Y. Kikuchi, et al., Jpn. J. Appl. Phys. 36, L1453 (1997).

4. Y. R. Ryu, W. J. Kim, and H. W. White, J. Cryst. Growth 219, 419 (2000).

5. X. Guo, J. Choi, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 40, L177 (2001).

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