Breakdown electroluminescence spectra of silicon carbide p-n junctions-Reference-Cited by-同舟云学术

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Breakdown electroluminescence spectra of silicon carbide p-n junctions

Published:1997-02 Issue:2 Volume:31 Page:169-172
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belous M. V.,Genkin A. M.,Genkina V. K.,Guseva O. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187101.pdf

Reference13 articles.

1. A. M. Genkin and V. N. Rodionov, Fiz. Tekh. Poluprovodn. 13, 789 (1979) [Sov. Phys. Semicond. 13, 463 (1979)].

2. A. O. Konstantinov, Fiz. Tekh. Poluprovodn. 21, 670 (1987) [Sov. Phys. Semicond. 21, 410 (1987)].

3. L. A. Kosyachenko, A. V. Pivovar, and V. M. Sklyarchuk, Zh. Prikl. Spektrosk. 36, 236 (1982).

4. W. R. L. Lambrecht, W. R. Segall, and W. Suttrop, Appl. Phys. Lett. 63, 2747 (1993).

5. M. Rohlfing, P. Kruger, and J. Pollmann, Phys. Rev. B 45, 17791 (1992).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation polarization of silicon carbide p-n-structures, operating in electrical breakdown regime;The European Physical Journal Applied Physics;2015-05

2. Oscillatory structure in radiation spectra of individual microplasmas in silicon carbide p-n-junctions;The European Physical Journal Applied Physics;2006-03

3. Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures;Semiconductors;1999-06

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