Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures-Reference-Cited by-同舟云学术

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Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

Published:1999-06 Issue:6 Volume:33 Page:672-676
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belous M. V.,Genkin A. M.,Genkina V. K.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187754.pdf

Reference6 articles.

1. Yu. M. Altaiskii and A. M. Genkin, Zh. Tekh. Fiz. 52, 543 (1982) [Sov. Phys. Tech. Phys. 27, 350 (1982)].

2. Yu. M. Altaiskii, A. M. Genkin, V. K. Genkina, and L. G. Ogneva, Élektron. Tekh., Ser. 2, No. 4 (190), 76 (1987).

3. M. V. Belous, A. M. Genkin, V. K. Genkina, and O. A. Guseva, Fiz. Tekh. Poluprovodn. 31, 213 (1997) [Semiconductors 31, 169 (1997)].

4. A. O. Konstantinov, Fiz. Tekh. Poluprovodn. 17, 2124 (1983) [Semiconductors 17, 1358 (1983)].

5. W. Hacker, Phys. Status Solidi A 25, 301 (1974).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oscillatory structure in radiation spectra of individual microplasmas in silicon carbide p-n-junctions;The European Physical Journal Applied Physics;2006-03

2. Temperature dependence of the band structure of 3C, 2H, 4H, and 6H SiC polytypes;Semiconductors;2003-03

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