Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3

Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm

Published:1999-08 Issue:8 Volume:33 Page:920-923
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zotova N. V.,Karandashev S. A.,Matveev B. A.,Remennyi M. A.,Stus’ N. M.,Talalakin G. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187633.pdf

Reference7 articles.

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