Special features of electrical activation of 28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing-Reference-Cited by-同舟云学术

Special features of electrical activation of 28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing

Published:2000-01 Issue:1 Volume:34 Page:27-31
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ardyshev V. M.,Ardyshev M. V.,Khludkov S. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187945.pdf

Reference11 articles.

1. V. M. Ardyshev and M. V. Ardyshev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 10, 1153 (1998).

2. V. M. Ardyshev and M. V. Ardyshev, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 7, 89 (1998).

3. V. M. Ardyshev and M. V. Ardyshev, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 78 (1998).

4. A. V. Burenkov, F. F. Komarov, M. A. Kumakhov, and M. M. Temkin, Tables of Parameters of Spatial Distribution of Ion-Implanted Impurities [in Russian] (Beloruss. Gos. Univ., Minsk, 1980).

5. Process and Device Simulation for MOS-VLSI Circuits, Ed. by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, and William G. Oldham (Martinus Nijhoff, Boston, 1983; Radio i Svyaz’, Moscow, 1988).

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