The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics-Reference-Cited by-同舟云学术

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The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Published:2010-06-30 Issue:2 Volume:10 Page:79-99
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Young Chadwin D.,Heh Dawei,Choi Ri-No,Lee Byoung-Hun,Bersuker Gennadi

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201008863883659.pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion;Instruments and Experimental Techniques;2023-12

2. Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 °C) microwave annealing for flexible electronics;Journal of Vacuum Science & Technology B;2023-04-11

3. Ultrafast I_D – V_G Technique for Reliable Cryogenic Device Characterization;IEEE Journal of the Electron Devices Society;2023

4. Pulsed gate voltage measurement for charge mobility extraction of organic transistors;Organic Electronics;2022-11

5. Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements;IEEE Transactions on Electron Devices;2018-06

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