Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique-Reference-Cited by-同舟云学术

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Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

Published:2014-10-30 Issue:5 Volume:14 Page:572-578
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Kim Hyun Woo,Kim Jong Pil,Kim Sang Wan,Sun Min-Chul,Kim Garam,Kim Jang Hyun,Park Euyhwan,Kim Hyungjin,Park Byung-Gook

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201432252666715.pdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor;Physica Scripta;2024-03-22

2. Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation;Discover Nano;2023-08-05

3. Inductive Line Tunneling FET Using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation;2023-06-07

4. A Novel Dopingless Ternary FET With the Metal Source for Ternary Inverter Implementation;IEEE Transactions on Nanotechnology;2023

5. Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors;Silicon;2022-07-29

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