Microtwinning in stress-relaxed In1 –xGaxAs/(001) InP hetero-epitaxial layers
Author:
Publisher
Walter de Gruyter GmbH
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science
Link
https://www.degruyter.com/document/doi/10.1524/zkri.1991.195.1-2.17/pdf
Reference26 articles.
1. Material parameters of In1−xGaxAsyP1−yand related binaries
2. Transmission electron microscopy observations of misfit dislocations in GaAsP epitaxial films
3. A dislocation model of twinning
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