On the Structure of Dangling Bond Defects in Silicon*
Author:
Publisher
Walter de Gruyter GmbH
Subject
Physical and Theoretical Chemistry
Link
https://www.degruyter.com/document/doi/10.1524/zpch.1987.151.Part_1_2.211/pdf
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2. Electron Spin Resonance of Free Radicals Formed from Group-IV and Group-V Hydrides in Inert Matrices at Low Temperature
3. Effect of Matrix Interactions and Buffer Gases on the Atomic Nitrogen Hyperfine Splitting
4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
5. EPR of a trapped vacancy in boron-doped silicon
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