Creation of a behavioral model of a LDMOS transistor based on an artificial MLP neural network and its description in Verilog-A language-Reference-Cited by-同舟云学术

Creation of a behavioral model of a LDMOS transistor based on an artificial MLP neural network and its description in Verilog-A language

Published:2021-07-26 Issue:2 Volume:14 Page:28-34
ISSN:2219-0767
Container-title:Modeling of systems and processes
language:en
Short-container-title:

Author:

Pobeda Sergey¹,Chernyh M.²,Makarenko F.³,Zolnikov Konstantin²

Affiliation:

1. AO "NIIET"

2. AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki"

3. AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki" (g. Voronezh)

Abstract

The article deals with the creation of a behavioral model of lateral metal oxide transistors (LDMOS) based on a neural network of the multilayer percep-tron type. The model is identified using a backpropa-gation algorithm. Demonstrated the process of creating an ANN model using Pytorch, a machine learning framework for the Python language, with subsequent transfer to the standard analog circuit modeling lan-guage Verilog-A.

Publisher

Infra-M Academic Publishing House

Subject

General Medicine

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