Mathematical model of radiation energy absorption by multilayer structure and solution by grid method

Abstract

When studying the radiation effect on microcircuits, the problem arises of calculating the absorbed energy. Often it comes down to determining the radiation resistance of microcircuits. However, in some cases it is necessary to determine the distribution of temperature and voltage in the chip housings. To do this, it is necessary to get an accurate picture of how the radiation energy was absorbed in each layer, depending on the coordinate. The paper considers the solution of this problem by the grid method, which allows us to calculate the energy absorption at each point of the multilayer structure. To do this, the placement of the chip in a three-dimensional coordinate system is considered, its multilayer structure is divided into nodes, in each of which the absorbed dose is calculated. The presented mathematical model describes the processes of absorption and attenuation of the intensity of the energy flow of -quanta. The model takes into account the processes associated with the transfer of energy between the regions for the photoelectric effect and the Compton effect. The proposed method is implemented programmatically, and the paper presents the results of calculating the absorbed dose in each layer of a multilayer structure. The advantage of the developed model and the method of its solution is to obtain the dose value at each point of the multilayer structure depending on the coordinates.