Modeling of processes in semiconductor structures under radiation exposure

Abstract

The radiation impact of outer space has an impact on electronic equipment and their characteristics change. The paper considers the simulation of the process of motion of holes generated in the oxide, which cause local deformation of the potential field of the lattice. Jumps of polarons make the motion of holes dispersed and highly dependent on temperature and oxide thickness. The article presents the temperature dependences of the voltage shift after a single radiation pulse. When holes move to the Si/SiO2 interface, some of the holes are captured by traps. The effect of the influence of the capture cross section on the increase in holes in traps is noticeable in the electrical dependence of the increase in the number of oxide traps immediately after irradiation. The graphs of the dependence of the threshold voltage shift due to oxide traps on the electric field in the oxide are plotted in this work. Immediately after its appearance, the charge of oxide traps begins to be neutralized. To study this process, time, temperature, and electrical dependences are plotted, and the ratio of trapped electrons to the number of trapped holes is shown for dry and wet gate oxide technologies at different oxide thicknesses. Thus, the influence of temperature and radiation influences on the motions of holes and oxide traps in semiconductor structures is shown.